FF600R12IE4 Infineon Technologies, FF600R12IE4 Datasheet - Page 7

• Manufacturer Part Number: FF600R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF600R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 3.35kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 600.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
;_^p * Q+nS
;_^p * Q+nS
5W-, *
5W-, *
2
2
‚KYi' * Q S
‚KYi' * Q S
;_^p * Q+nS
;_^p * Q+nS
5W-, *
5W-, *
2
2
‚KYi' * Q S
‚KYi' * Q S
4
4
4
4
3
3
3
3
100
100
0,1
3 $
3 $
3 $
3 $
80
60
40
20
10
0
1
0,001
0
3 3 3 3
]F "'( * /
]F "'( * /
]F "'( * /
]F "'( * /
:#
:#
:#
:#
%
%
%
%
;_^pF 2=> *
;_^pF 2=> * P T
‚KYi' %
200
0,01
4
4
4
4
:
:
:
:
400
"
"
"
"
3
3
PT
3
3
\wE&7:y
\w y
+n w y
%
%
600
%
%
0,1
Q
Q
Q
Q
Q
Q
Q
Q
w y
/F
F
:
:
:
:
S
S
S
S
3S
3S
3S
3S
800
FF600R12IE4
UF
F
3
3
3
3
!
1
!
F P
1000
F/
F
F/
1200
10
7
;_^p * Q5WS
;_^p * Q5WS
;_^p * Q5WS
;_^p * Q5WS
+n * /
+n * /
+n * /
+n * /
H2
H2
H2
H2
H2
H2
H2
H2
5 * Q2S
5 * Q2S
5 * Q2S
5 * Q2S
4
4
100000
4
4
10000
3
3
3
3
1000
100
100
3 $
3 $
3 $
3 $
90
80
70
60
50
40
30
20
10
2
2
2
2
0
0,0
0
F "'( * /
F "'( * /
F "'( * /
F "'( * /
20
%
%
%
%
;_^pF 2=> *
;_^pF 2=> * P T
5Kƒ?
7
7
7
7
3
3
3
3
2,0
40
:
:
:
:
"
"
"
"
60
3
3
PT
3
3
Q
Q
Q
Q
2' wT y
5W w]y
4,0
Q
Q
Q
Q
80
Q
Q
Q
Q
Q
Q
Q
Q
Vorläufige Daten
preliminary data
3S
3S
3S
3S
100 120 140 160
S
S
S
S
3S
3S
3S
3S
S
S
S
S
6,0
8,0