BUK6211-75C NXP Semiconductors, BUK6211-75C Datasheet

MOSFET,N CH,75V,52A,SOT428

BUK6211-75C

Manufacturer Part Number
BUK6211-75C
Description
MOSFET,N CH,75V,52A,SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6211-75C118.pdf (15 pages)

Specifications of BUK6211-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
9.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6211-75C
N-channel TrenchMOS FET
Rev. 02 — 28 September 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation T
drain-source on-state
resistance
Conditions
T
V
see
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
Min
-
-
-
-
Product data sheet
Typ
-
-
-
9.3
Max Unit
75
74
158
11
V
A
W
mΩ

Related parts for BUK6211-75C

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BUK6211-75C,118
Part Number:
BUK6211-75C,118
Description:
MOSFET N-CH TRENCH DPAK
Manufacturer:
NXP Semiconductors
Datasheet:
BUK6211-75C118.pdf (15 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors

BUK6211-75C Summary of contents

Page 1

... BUK6211-75C N-channel TrenchMOS FET Rev. 02 — 28 September 2010 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 3 Typ ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 297 - 158 -55 175 -55 175 ...

Page 4

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET 0 50 100 150 T 003aae408 =10 μ 100 μ 100 (V) DS © ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6211-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Min Typ Max - - 0.95 003aae407 δ = ...

Page 6

... R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Min Typ Max 1.8 2.3 2.8 ...

Page 7

... I (A) D Fig 6. 003aae885 R (m Ω ( 3.8 3.6 3.4 3.3 3 (V) DS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Min Typ = 25 ° 50.5 - 105 120 I D 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... Product data sheet 003aad805 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae887 3.8 4 4.5 ( 100 125 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET - ( min typ max - ...

Page 9

... 100 Q (nC) G Fig 14. Gate charge waveform definitions 200 I S (A) 150 100 = 175 ° ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET GS(pl) V GS(th GS1 GS2 G(tot) 003aae416 1 (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 10

... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK6211-75C Product data sheet (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET 003aae412 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...

Page 11

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6211-75C v.2 20100928 • Modifications: Status changed from objective to product. • Various changes to content. BUK6211-75C v.1 20100908 BUK6211-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 13

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 September 2010 BUK6211-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 28 September 2010 Document identifier: BUK6211-75C ...

Related keywords