BUK625R0-40C NXP Semiconductors, BUK625R0-40C Datasheet

MOSFET,N CH,40V,87A,SOT428

BUK625R0-40C

Manufacturer Part Number
BUK625R0-40C
Description
MOSFET,N CH,40V,87A,SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BUK625R0-40C118.pdf (14 pages)

Specifications of BUK625R0-40C

Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
4.1mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 17 September 2010
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
4.1
Max Unit
40
90
158
5
V
A
W
mΩ

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BUK625R0-40C Summary of contents

Page 1

... BUK625R0-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C Min Max - 40 [1] -16 16 [2] -20 20 [3] Figure Figure 490 - 158 -55 175 -55 175 [ ...

Page 4

... P der (%) 80 40 150 200 Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C 100 150 Normalized total power dissipation as a function of mounting base temperature t p 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK625R0-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C Min Typ Max - - 0.95 003aad070 δ ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... V DS 003aae320 R (m (A) D Fig 6. 003a a e 776 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C N-channel TrenchMOS intermediate level FET Min Typ - 0. Drain-source on-state resistance as a function of gate-source voltage; typical values 100 10 ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 003a a e 779 4.0 4.5 5.0 6.0 10 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C N-channel TrenchMOS intermediate level FET - ( min typ max - ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae321 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C N-channel TrenchMOS intermediate level FET ( charge; typical values 100 I S ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK625R0-40C v.1 20100917 BUK625R0-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 September 2010 BUK625R0-40C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 September 2010 Document identifier: BUK625R0-40C ...

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