BUK661R8-30C NXP Semiconductors, BUK661R8-30C Datasheet - Page 7

• Manufacturer Part Number: BUK661R8-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R8-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK661R8-30C
Product data sheet
Symbol
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
D
S
SD
iss
oss
rss
r
(A)
I
D
60
40
20
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
10
Parameter
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
5
4.5
0.25
4
…continued
0.5
0.75
V
GS
Conditions
V
T
V
R
from upper edge of drain mounting base
to centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
j
j
GS
DS
DS
G(ext)
V
003aae293
(V) = 3.3
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
DS
Figure 20
= 25 V; R
= 25 V
= 0 V; V
(V)
3.8
3.6
3.4
Rev. 02 — 28 December 2010
= 10 Ω
1
GS
S
DS
/dt = -100 A/µs; V
L
= 0 V; T
Figure 19
= 1 Ω; V
= 25 V; f = 1 MHz;
j
= 25 °C
Fig 6.
j
= 25 °C;
GS
(A)
I
= 10 V;
D
N-channel TrenchMOS intermediate level FET
80
60
40
20
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
GS
0
= 0 V;
1
BUK661R8-30C
T
2
j
= 175 °C
Min
-
-
-
-
-
-
-
-
-
-
-
-
3
Typ
8188
1327
761
43
93
272
142
3.5
7.5
0.8
62.7
115
T
© NXP B.V. 2010. All rights reserved.
j
4
= 25 °C
003aae294
V
GS
1592
-
Max
10918 pF
1042
-
-
-
-
-
1.2
-
-
(V)
5
Unit
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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