BUK663R2-40C NXP Semiconductors, BUK663R2-40C Datasheet - Page 4

• Manufacturer Part Number: BUK663R2-40C
• Description: MOSFET,N CH,40V,100A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R2-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK663R2-40C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
D
I
10
D
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
= 25 °C; I
50
(1)
DM
is a single pulse
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae328
mb
1
DS
(°C)
/ I
D
200
Rev. 2 — 14 October 2010
Fig 2.
P
DC
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK663R2-40C
100
V
DS
(V)
150
100 μ s
1 ms
10 ms
100 ms
t
© NXP B.V. 2010. All rights reserved.
p
T
=10 μ s
003aae329
mb
03na19
(°C)
10
200
2
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