IXFH12N100Q IXYS SEMICONDUCTOR, IXFH12N100Q Datasheet
IXFH12N100Q
Manufacturer Part Number
IXFH12N100Q
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH12N100Q.pdf
(4 pages)
Specifications of IXFH12N100Q
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
1.05ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
DM
D25
AR
J
JM
stg
L
DSS
GS(th)
DS(on)
DGR
GS
GSM
AR
D
DSS
d
g
, High dv/dt
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
GS
DS
GS
DS
GS
GS
J
J
C
C
C
C
J
C
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
150 C, R
I
TM
DM
GS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 3 mA
= 4 mA
DSS
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
D25
GS
JM
= 1 M
DD
(T
T
T
12N100Q
10N100Q
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
J
J
J
V
= 25 C
= 125 C
12N100Q
10N100Q
12N100Q
10N100Q
12N100Q
10N100Q
= 25 C, unless otherwise specified)
DSS
,
TO-247 AD
TO-268
2 %
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
300
300
Maximum Ratings
typ.
1000
1000
1.13/10 Nm/lb.in.
12
10
48
40
12
10
20
30
30
5
150
6
4
1.05
1.20
100
max.
5.5
50
1
V/ns
mJ
mA
W
nA
g
g
C
C
C
C
V
V
V
V
V
V
A
A
A
A
A
A
A
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
1000 V 12 A 1.05
1000 V 10 A 1.20
t
rr
V
DSS
DS (on)
250 ns
G
I
S
D25
TAB = Drain
D
= Drain
g
process
97539D(12/02)
R
DS(on)
(TAB)
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IXFH12N100Q Summary of contents
Page 1
HiPerFET TM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Q , High dv/dt g Symbol Test Conditions 150 C DSS 150 C; R DGR ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
Volts DS Figure 1. Output Characteristics 10V 2 125 J 1.8 ...
Page 4
V = 500V Gate Charge - nC Figure 7. Gate Charge 125 ...