IXFT36N50P IXYS SEMICONDUCTOR, IXFT36N50P Datasheet
IXFT36N50P
Manufacturer Part Number
IXFT36N50P
Description
MOSFET, N, TO-268
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH36N50P.pdf
(5 pages)
Specifications of IXFT36N50P
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT36N50P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXFT36N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS220
S
TO-247
TO-268
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250µA
, V
G
= 0.5 I
= 3 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
500
500
540
150
300
260
1.5
36
90
36
50
10
6
5
2
±100
500
Max.
5.0
25
170 mΩ
V/ns
mJ
nA
µA
°C
°C
°C
°C
°C
µA
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-247 AD (IXFH)
TO-268 (IXFT)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
PLUS220 (IXFV)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
D
G
S
G
≤ ≤ ≤ ≤ ≤ 170 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ms
= 500
=
S
S
D = Drain
TAB = Drain
36
DS99364E(03/06)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V
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IXFT36N50P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25° 175° C DSS 25° 175° DGR J V Continuous GS ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characte ris tics @ 10V olts D S Fig. 3. Output Characte ris tics ...
Page 4
Fig. 7. Input Adm ittance 125º 25ºC 15 -40º 4 olts G S Fig. 9. Sour ce Cur re nt ...
Page 5
PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.01 Pulse Width - Seconds IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV ...