IXFT36N50P IXYS SEMICONDUCTOR, IXFT36N50P Datasheet - Page 4

• Manufacturer Part Number: IXFT36N50P
• Description: MOSFET, N, TO-268
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFT36N50P

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 36A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
0.4
4
0
f = 1MH z
T
0.5
J
5
4.5
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
-40ºC
Fig. 9. Sour ce Cur re nt vs .
Sour ce -To-Dr ain V oltage
25ºC
J
0.6
10
= 125ºC
5
V
0.7
V
15
V
G S
S D
D S
- V olts
- V olts
5.5
0.8
20
- V olts
T
J
0.9
= 25ºC
25
6
30
1
C is s
C oss
C rs s
6.5
1.1
35
1.2
40
7
100
10
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
T
T
V
I
I
DS(on)
D
G
IXFV 36N50P IXFV 36N50PS
J
C
10
= -40ºC
DS
10
125ºC
= 18A
= 10m A
= 150ºC
= 25ºC
Fig. 8. Trans conductance
25ºC
IXFH36N50P IXFT 36N50P
= 250V
20
Lim it
20
Fig. 10. Gate Char ge
Fig. 12. Forw ar d-Bias
Safe Ope r ating Ar e a
Q
30
30
G
I
- nanoCoulombs
V
D
40
D S
- A mperes
D C
40
100
- V olts
50
50
60
60
70
70
80
100µs
1m s
10m s
80
25µs
90
1000
100
90