PSMN1R6-30PL NXP Semiconductors, PSMN1R6-30PL Datasheet
PSMN1R6-30PL
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PSMN1R6-30PL Summary of contents
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... PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Ordering information Type number Package Name Description PSMN1R6-30PL TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB PSMN1R6-30PL_2 Product data sheet PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 02 — 25 June 2009 Graphic symbol D G ...
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... ° 100 j(init Ω; unclamped R GS 003aad003 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 25 June 2009 PSMN1R6-30PL Min Max - - [1] - 100 1; [1] - 100 Figure 3 - 1268 - 306 -55 175 -55 175 [1] - 100 - 1268 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN1R6-30PL_2 Product data sheet N-channel 30 V 1.7 mΩ logic level MOSFET Limit DSon DS D (1) 1 Conditions see Figure Rev. 02 — 25 June 2009 PSMN1R6-30PL 003aad115 10 μs 100 μ 100 (V) DS Min Typ Max - 0.22 0.49 003aad005 t p δ ...
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... Figure 4.5 V; see Figure 14; see Figure 4.5 V; see Figure 4.5 V; see Figure 14; see Figure see Figure MHz °C; see Figure 16 j Rev. 02 — 25 June 2009 PSMN1R6-30PL Min Typ Max Unit 1.3 1.7 2. µ 150 µ 100 100 nA - 1.6 2.1 mΩ ...
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... GS j Figure /dt = -100 A/µ 003aad011 DSon (mΩ 2 ( (V) DS Fig 6. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 25 June 2009 PSMN1R6-30PL Min Typ Max - 104 - - 163 - - 174 - - 0.77 1 003aad012 2.6 2 4.5 3.5 10 100 200 I (A) D © ...
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... Fig 8. Forward transconductance as a function of drain current; typical values 003aad019 (pF (V) GS Fig 10. Input and reverse transfer capacitances as a function of gate-source voltage; typical values Rev. 02 — 25 June 2009 PSMN1R6-30PL 003aad018 100 I (A) D 003aad017 C iss C rss (V) GS © NXP B.V. 2009. All rights reserved. ...
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... V (V) 3 -60 GS Fig 12. Gate-source threshold voltage as a function of junction temperature 03aa27 Fig 14. Gate charge waveform definitions 120 180 ( ° Rev. 02 — 25 June 2009 PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET 003a a c982 max typ min 0 60 120 T (° GS(pl) V GS(th) ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° 0.2 0.4 0.6 Rev. 02 — 25 June 2009 PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET 003aad016 (V) DS 003aad014 = 25 ° 0 (V) SD © NXP B.V. 2009. All rights reserved. ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 25 June 2009 PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2 ...
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... Various content changes. PSMN1R6-30PL_1 20090518 PSMN1R6-30PL_2 Product data sheet N-channel 30 V 1.7 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - Rev. 02 — 25 June 2009 PSMN1R6-30PL Supersedes PSMN1R6-30PL_1 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 25 June 2009 PSMN1R6-30PL © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN1R6-30PL_2 All rights reserved. Date of release: 25 June 2009 ...