PEMB9 NXP Semiconductors, PEMB9 Datasheet - Page 4

• Manufacturer Part Number: PEMB9
• Description: TRANSISTOR,PNP/PNP W/RES,50V,SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMB9

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Power Dissipation Pd: 300mW
• Dc Collector Current: -100mA
• Operating Temperature Range: -65°C To +150°C
• Dc Current Gain Hfe: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 03
Per transistor
R
Per device
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
th j-a
th j-a
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
V
V
I
f = 1 MHz
C
E
CB
CE
CE
EB
CE
CE
CE
= −5 mA; I
= i
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
= −5 V; I
= −0.3 V; I
e
= 0; V
4
CONDITIONS
T
note 1
notes 1 and 2
T
note 1
note 1
CB
C
C
B
C
amb
amb
E
B
B
= 0
= −0.25 mA
= −5 mA
= −100 μA
C
= −10 V;
CONDITIONS
= 0
= 0
= 0; T
= −1 mA
≤ 25 °C
≤ 25 °C
j
= 150 °C
−
−
−
−
100
−
−
−1.4
7
3.7
−
MIN.
VALUE
PEMB9; PUMB9
625
625
416
416
−
−
−
−
−
−
−0.7
−0.8
10
4.7
−
TYP.
Product data sheet
−100
−1
−50
−150
−
−100
−0.5
−
13
5.7
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT