BCM856DS NXP Semiconductors, BCM856DS Datasheet - Page 7

• Manufacturer Part Number: BCM856DS
• Description: TRANSISTOR,PNP/PNP MATCHED,SOT457
• Manufacturer: NXP Semiconductors

Specifications of BCM856DS

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -65V
• Gain Bandwidth Ft Typ: 175MHz
• Power Dissipation Pd: 380mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes

NXP Semiconductors
BCM856BS_BCM856DS_1
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
0.8
0.6
0.4
1
8
6
4
2
0
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa544
006aaa546
C
V
(mA)
CB
(V)
10
Rev. 01 — 7 August 2008
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
BCM856BS; BCM856DS
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
1
CE
= 5 V; T
PNP/PNP matched double transistors
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
V
© NXP B.V. 2008. All rights reserved.
EB
006aaa545
006aaa547
(V)
10
6
2
7 of 14