BLF645 NXP Semiconductors, BLF645 Datasheet
BLF645
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BLF645 Summary of contents
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... BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics thermal resistance from junction to case is measured under RF conditions. Rev. 01 — 27 January 2010 BLF645 Broadband power LDMOS transistor Simplified outline Graphic symbol [1] Min ...
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... Application information Table Mode of operation CW, class-AB 7.1 Ruggedness in class-AB operation The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. BLF645_1 Product data sheet Characteristics per section C per section; unless otherwise specified. drain-source breakdown voltage ...
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... Dq = 600 mA (for total device 900 mA (for total device 1200 mA (for total device 1400 mA (for total device 1800 mA (for total device). Dq Power gain as a function of load power; typical values © NXP B.V. 2010. All rights reserved. BLF645 001aal362 160 ( ...
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... MHz 50.5 dBm (112 W). L(1dB) = 51.5 dBm (141 W). L(3dB) Load power as function of input power; typical values Rev. 01 — 27 January 2010 Broadband power LDMOS transistor 001aal363 ideal P L (2) ( (dBm) i BLF645 © NXP B.V. 2010. All rights reserved ...
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... Dq = 900 mA (for total device 1200 mA (for total device 1400 mA (for total device 1800 mA (for total device). Dq Third order intermodulation distortion as a function of peak envelope load power; typical values © NXP B.V. 2010. All rights reserved. BLF645 001aal365 200 (W) L(PEP ...
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... BLF645 electromigration (I DS(DC) Rev. 01 — 27 January 2010 Broadband power LDMOS transistor (1) (2) (3) (4) (5) ( DS(DC) , total device) BLF645 001aal366 20 (A) © NXP B.V. 2010. All rights reserved. ...
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... See Table 8 for a list of components. Fig 7. Class-AB common-source production test circuit BLF645 INPUT REVZ C5 NXP See Table 8 for a list of components. Fig 8. Component layout for class-AB production test circuit BLF645_1 Product data sheet C10 C10 C8 Rev. 01 — 27 January 2010 BLF645 Broadband power LDMOS transistor ...
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... Ω; length = 3.5 F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 01 — 27 January 2010 BLF645 Broadband power LDMOS transistor Remarks [1] [2] Murata X7R or equivalent TDK C4532X7R1E475MT020U or capacitor of same quality. [2] [2] [3] TDK C4532X7R1E475MT020U or capacitor of same quality. ...
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... EUROPEAN PROJECTION BLF645 SOT540A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-08-27 99-12-28 © NXP B.V. 2010. All rights reserved ...
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... Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface-Mount Device Voltage Standing-Wave Ratio Data sheet status Product data sheet Rev. 01 — 27 January 2010 BLF645 Broadband power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2010. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 27 January 2010 BLF645 Broadband power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF645 All rights reserved. Date of release: 27 January 2010 Document identifier: BLF645_1 ...