BUK664R6-40C NXP Semiconductors, BUK664R6-40C Datasheet
BUK664R6-40C
Specifications of BUK664R6-40C
Related parts for BUK664R6-40C
BUK664R6-40C Summary of contents
Page 1
... BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 November 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
Page 2
... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol G ...
Page 3
... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C Min Max - 40 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 Figure 511 - 158 -55 175 -55 175 ...
Page 4
... BUK664R6-40C Product data sheet 003aad075 150 200 T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C N-channel TrenchMOS intermediate level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature (V) ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK664R6-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C Min Typ Max - - 0.95 003aad070 δ ...
Page 6
... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
Page 7
... A/µ 003aae319 ( ° (V) GS Fig 6. 003aae323 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C N-channel TrenchMOS intermediate level FET Min Typ - 0. 100 Forward transconductance as a function of drain current; typical values 100 10.0 5 ...
Page 8
... T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae322 4.0 4.5 5.0 6.0 10 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C N-channel TrenchMOS intermediate level FET - ( min typ max - ...
Page 9
... GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae321 C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C N-channel TrenchMOS intermediate level FET ( charge; typical values 100 I S (A) ...
Page 10
... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK664R6-40C v.2 20101117 • Modifications: Status changed from objective to product. BUK664R6-40C v.1 20100521 BUK664R6-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
Page 12
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C © NXP B.V. 2010. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK664R6-40C Trademarks © NXP B.V. 2010. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 November 2010 Document identifier: BUK664R6-40C ...