STN83003 STMicroelectronics, STN83003 Datasheet

TRANSISTOR, NPN, 400V, 1A, SOT-223

STN83003

Manufacturer Part Number
STN83003
Description
TRANSISTOR, NPN, 400V, 1A, SOT-223
Manufacturer
STMicroelectronics
Datasheet

Specifications of STN83003

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
1.6W
Dc Collector Current
500mA
Transistor Case Style
SOT-223
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Dc Current Gain Hfe
25
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STN83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STN93003, its
complementary PNP transistor.
ABSOLUTE MAXIMUM RATINGS
June 2003
Symbol
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEO
EBO
CES
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage
(I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
C
= 0,
Planar
I
B
= 0.75 A, t
technology
Parameter
p
c
< 5 ms)
= 25
p
< 10 s, T
p
< 5 ms)
B
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
for
= 0)
j
high
< 150
o
C)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
2
-65 to 150
V
Value
(BR)EBO
0.75
SOT-223
700
400
150
1.5
1.5
1.6
3
1
STN83003
2
PRELIMINARY DATA
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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STN83003 Summary of contents

Page 1

... It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. ...

Page 2

... STN83003 THERMAL DATA R Thermal Resistance Junction-ambient thj-case 2 * Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE RESISTIVE LOAD ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Resistive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Resistive Load Storage Time STN83003 3/6 ...

Page 4

... STN83003 Inductive Load Fall Time Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 Inductive Load Storage Time ...

Page 5

... H 6.70 7. 0.02 inch MAX. MIN. TYP. 1.80 0.80 0.024 0.027 3.10 0.114 0.118 0.32 0.009 0.010 6.70 0.248 0.256 0.090 0.181 3.70 0.130 0.138 7.30 0.264 0.276 o 10 STN83003 MAX. 0.071 0.031 0.122 0.013 0.264 0.146 0.287 o 10 P008B 5/6 ...

Page 6

... STN83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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