STN83003 STMicroelectronics, STN83003 Datasheet
STN83003
Specifications of STN83003
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STN83003 Summary of contents
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... It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. ...
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... STN83003 THERMAL DATA R Thermal Resistance Junction-ambient thj-case 2 * Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE RESISTIVE LOAD ...
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... DC Current Gain Collector Emitter Saturation Voltage Resistive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Resistive Load Storage Time STN83003 3/6 ...
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... STN83003 Inductive Load Fall Time Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 Inductive Load Storage Time ...
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... H 6.70 7. 0.02 inch MAX. MIN. TYP. 1.80 0.80 0.024 0.027 3.10 0.114 0.118 0.32 0.009 0.010 6.70 0.248 0.256 0.090 0.181 3.70 0.130 0.138 7.30 0.264 0.276 o 10 STN83003 MAX. 0.071 0.031 0.122 0.013 0.264 0.146 0.287 o 10 P008B 5/6 ...
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... STN83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...