111RKI80PBF Vishay, 111RKI80PBF Datasheet - Page 2

• Manufacturer Part Number: 111RKI80PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80PBF

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact:
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
T(TO)1
T(TO)2
V
T(AV)
I
DRM
TSM
Phase Control Thyristors
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
t
(Stud Version), 110 A
,
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
DC at 83 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
d
R
J
J
J
= T
= T
= T
= 25 °C, anode supply 6 V resistive load
= 0.67 % V
= 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω
= 350 A, T
= 50 A, T
J
J
J
maximum, anode voltage ≤ 80 % V
maximum linear to 80 % rated V
maximum rated V
T(AV)
T(AV)
[e-mail]
), T
), T
J
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
DRM
= T
T(AV)
T(AV)
= T
J
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
J
, T
J
maximum, dI/dt = - 5 A/μs
< I < π x I
< I < π x I
g
maximum, t
J
J
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
RRM
RRM
r
≤ 1 μs
DRM
T(AV)
T(AV)
/V
Sinusoidal half wave,
initial T
RRM
p
), T
), T
= 10 ms sine pulse
J
J
applied
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
Document Number: 94379
VALUES
VALUES
VALUES
Revision: 04-Nov-09
2080
2180
1750
1830
21.7
19.8
15.3
14.0
0.82
1.02
2.16
1.70
1.57
300
110
500
110
172
217
200
400
20
90
1
UNITS
UNITS
UNITS
kA
A/μs
kA
V/μs
mΩ
mA
mA
°C
μs
A
A
V
V
2
2
√s
s