111RKI80PBF Vishay, 111RKI80PBF Datasheet - Page 4

• Manufacturer Part Number: 111RKI80PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80PBF

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
www.vishay.com
4
94379_01
94379_03a
94379_04a
140
130
120
110
100
160
140
120
100
220
200
180
160
140
120
100
90
80
80
60
40
20
80
60
40
20
0
0
0
0
0
Fig. 1 - Current Ratings Characteristics
20
180°
120°
180°
120°
20
90°
60°
30°
Average On-State Current (A)
90°
60°
30°
20
Average On-State Current (A)
DC
Average On-State Current (A)
40
R
30°
thJC
40
40
60
(DC) = 0.27 K/W
80
60°
60
60
100
90°
Conduction angle
For technical questions, contact:
Conduction period
Conduction angle
120
80
T
80
120°
J
T
J
= 140 °C
= 140 °C
Ø
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
140
RMS limit
Ø
Ø
RMS limit
100
100
180°
Phase Control Thyristors
160
(Stud Version), 110 A
120
120
180
[e-mail]
94379_02
94379_03b
94379_04b
140
130
120
110
100
160
140
120
100
220
200
180
160
140
120
100
90
80
70
80
60
40
20
80
60
40
20
0
0
0
0
0
Fig. 2 - Current Ratings Characteristics
20
20
20
Average On-State Current (A)
Ambient Temperature (°C)
Ambient Temperature (°C)
30°
40
Maximum Allowable
Maximum Allowable
40
40
R
thJC
60
60°
(DC) = 0.27 K/W
60
60
80
90°
100
120°
80
80
Document Number: 94379
Conduction period
120
100
100
Revision: 04-Nov-09
180°
140
Ø
120
120
160 180
DC
140
140