111RKI80PBF Vishay, 111RKI80PBF Datasheet - Page 5

• Manufacturer Part Number: 111RKI80PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80PBF

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94379
Revision: 04-Nov-09
94379_05
94379_08
2000
1800
1600
1400
1200
1000
800
0.001
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
1
0.1
0.0001
1
Number of Equal Amplitude Half
Steady state value
R
(DC operation)
thJC
Cycle Current Pulses (N)
= 0.27 K/W
At any rated load condition and with
rated V
RRM
10
applied following surge.
0.001
94379_07
10 000
For technical questions, contact:
1000
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
10
1
Fig. 8 - Thermal Impedance Z
Fig. 7 - On-State Voltage Drop Characteristics
0
J
Phase Control Thyristors
= 140 °C
T
Instantaneous On-State Voltage (V)
(Stud Version), 110 A
J
Square Wave Pulse Duration (s)
= 25 °C
1
100
0.01
2
110RKI...PbF, 111RKI...PbF Series
T
3
[e-mail]
J
thJC
= 140 °C
0.1
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Characteristic
4
2500
2000
1500
1000
500
0.01
Fig. 6 - Maximum Non-Repetitive Surge Current
Vishay High Power Products
5
Maximum non-repetitive surge current
Pulse Train Duration (s)
versus pulse train duration. Control of
1
conduction may not be maintained.
0.1
Rated V
No voltage reapplied
Initial T
1
10
RRM
www.vishay.com
J
reapplied
= 140 °C
10
5