111RKI80PBF Vishay, 111RKI80PBF Datasheet - Page 3

• Manufacturer Part Number: 111RKI80PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80PBF

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• The table above shows the increment of thermal resistance R
Document Number: 94379
Revision: 04-Nov-09
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact:
0.043
0.052
0.066
0.096
0.167
SYMBOL
SYMBOL
+ V
P
- V
R
R
P
V
T
V
I
I
I
Phase Control Thyristors
G(AV)
T
thCS
GM
GD
thJC
GT
GM
Stg
GT
GD
GM
J
GM
(Stud Version), 110 A
T
T
T
T
T
T
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 140 °C
= - 40 °C
= 25 °C
= 140 °C
= T
thJC
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
110RKI...PbF, 111RKI...PbF Series
TEST CONDITIONS
TEST CONDITIONS
[e-mail]
p
p
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
cathode applied
≤ 5 ms
≤ 5 ms
0.031
0.053
0.071
0.101
0.169
DRM
Vishay High Power Products
anode to
TEST CONDITIONS
T
J
- 40 to 140
- 40 to 150
TYP.
= T
180
VALUES
2.5
1.6
80
40
1
(137)
(120)
0.27
15.5
130
VALUES
0.1
J
TO-209AC (TO-94)
14
maximum
0.25
3.0
3.0
6.0
12
20
10
MAX.
120
2
www.vishay.com
-
-
-
-
(lbf · in)
UNITS
N · m
K/W
°C
UNITS
g
UNITS
mA
mA
K/W
W
A
V
V
V
3