111RKI80PBF Vishay, 111RKI80PBF Datasheet - Page 6

• Manufacturer Part Number: 111RKI80PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80PBF

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
94379_09
100
0.1
10
1
0.001
Rectangular gate pulse
(a) Recommended load line for
(b) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
r
≤ 0.5 μs, t
≤ 1 μs, t
V
GD
Device code
p
≥ 6 μs
p
I
GD
0.01
≥ 6 μs
For technical questions, contact:
1
3
4
2
5
11
1
LINKS TO RELATED DOCUMENTS
0.1
Phase Control Thyristors
Instantaneous Gate Current (A)
(b)
(Stud Version), 110 A
-
-
-
-
-
Fig. 9 - Gate Characteristics
(a)
0
2
I
Thyristor
Voltage code x 10 = V
T(AV)
None = Standard production
PbF = Lead (Pb)-free
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
RKI
rated average output current (rounded/10)
3
1
[e-mail]
120
4
PbF
10
RRM
5
(1)
(see Voltage Ratings table)
www.vishay.com/doc?95003
Frequency limited by P
(1) P
(2) P
(3) P
(4) P
(2)
GM
GM
GM
GM
(3)
= 12 W, t
= 30 W, t
= 60 W, t
= 200 W, t
100
p
p
p
(4)
p
= 5 ms
= 2 ms
= 1 ms
G(AV)
= 300 μs
Document Number: 94379
1000
Revision: 04-Nov-09