PDTC123YU T/R NXP Semiconductors, PDTC123YU T/R Datasheet - Page 5

Digital Transistors TRANS RET TAPE-7

PDTC123YU T/R

Manufacturer Part Number
PDTC123YU T/R
Description
Digital Transistors TRANS RET TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC123YU T/R

Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.222
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTC123YU,115
NXP Semiconductors
7. Characteristics
PDTC123Y_SER_4
Product data sheet
Table 8.
T
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25
°
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
C unless otherwise specified.
Characteristics
Rev. 04 — 16 November 2009
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
=10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
C
C
C
B
E
B
B
E
= 0 A
= 5 mA
= 100 μA
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
C
e
= 20 mA
= 0 A;
PDTC123Y series
2.5
Min
-
-
-
-
35
-
-
1.54
3.6
-
Typ
-
-
-
-
-
-
0.75
1.15
2.2
4.5
-
© NXP B.V. 2009. All rights reserved.
2.86
Max
100
1
50
700
-
150
0.3
-
5.5
2
nA
V
V
Unit
μA
μA
μA
mV
pF
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