PDTC123JT T/R NXP Semiconductors, PDTC123JT T/R Datasheet - Page 5

Digital Transistors TRANS RET TAPE-7

PDTC123JT T/R

Manufacturer Part Number
PDTC123JT T/R
Description
Digital Transistors TRANS RET TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC123JT T/R

Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTC123JT,215
NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 13
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 μA; V
= 5 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
B
C
CB
CE
E
B
B
= 0.25 mA
= 0
= 10 mA
CE
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
j
= 150 °C
100
1.1
1.54
17
MIN.
PDTC123J series
0.6
0.75
2.2
21
TYP.
Product data sheet
100
1
50
180
100
0.5
2.86
26
2.5
MAX.
nA
μA
μA
μA
mV
V
V
pF
UNIT

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