PZU3.9B,115 NXP Semiconductors, PZU3.9B,115 Datasheet - Page 5

DIODE ZENER 3.9V 310MW SOD323F

PZU3.9B,115

Manufacturer Part Number
PZU3.9B,115
Description
DIODE ZENER 3.9V 310MW SOD323F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZU3.9B,115

Voltage - Zener (nom) (vz)
3.9V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
3µA @ 1V
Tolerance
±5%
Power - Max
310mW
Impedance (max) (zzt)
90 Ohm
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Operating Temperature
-65°C ~ 150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3904-2
934059747115
PZU3.9B T/R
NXP Semiconductors
Table 9.
T
PZUXB_SER_2
Product data sheet
PZU
xxx
6.2
6.8
7.5
8.2
9.1
10
11
12
13
14
j
= 25
°
Sel Working
B
B1 5.86
B2 6.06
B3 6.26
B
B1 6.47
B2 6.65
B3 6.86
B
B1 7.06
B2 7.28
B3 7.52
B
B1 7.76
B2 8.02
B3 8.28
B
B1 8.56
B2 8.85
B3 9.15
B
B1 9.45
B2 9.77
B3 10.11
B
B1 10.44
B2 10.76
B3 11.10
B
B1 11.42
B2 11.74
B3 12.08
B
B1 12.47
B2 12.91
B3 13.37
B2 13.70
C unless otherwise specified
Characteristics per type; PZU6.2B to PZU36B
voltage
V
I
Min
5.86
6.47
7.06
7.76
8.56
9.45
10.44
11.42
12.47
Z
Z
= 5 mA
(V);
Max
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
9.55
8.93
9.23
9.55
10.55
9.87
10.21
10.55
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
14.30
Maximum differential
resistance
r
I
80
60
60
60
60
60
60
80
80
80
Z
dif
= 0.5 mA I
(Ω)
30
20
10
10
10
10
10
10
10
10
Z
= 5 mA
Rev. 02 — 15 November 2009
100
100
100
100
100
Reverse
current
I
Max
500
500
500
500
500
R
(nA)
V
3
3.5
4
5
6
7
8
9
10
11
R
(V) Typ
Temperature
coefficient
S
I
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
10.4
Z
Single Zener diodes in a SOD323F package
Z
= 5 mA
(mV/K);
250
215
170
150
120
110
108
105
103
101
Diode
capacitance
C
Max
d
(pF)
PZUxB series
[1]
Non-repetitive peak
reverse current
I
Max
5.5
5.5
3.5
3.5
3.5
3.5
3
3
2.5
2
ZSM
© NXP B.V. 2009. All rights reserved.
(A)
[2]
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