FP25R12KT3 Infineon Technologies, FP25R12KT3 Datasheet - Page 9

• Manufacturer Part Number: FP25R12KT3
• Description: IGBT Modules N-CH 1.2KV 40A
• Manufacturer: Infineon Technologies

Specifications of FP25R12KT3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 40 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 2
• Packages: AG-ECONO2-1
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3 Fast
• Housing: EconoPIM™ 2

Technische Information / technical information
IGBT-Module
IGBT-modules
2- ( U,-.W
2- ( U,-.W
,@. ( 0) ,
,@. ( 0) ,
g%+ % #
g%+ % #
g%+
g%+
2- ( U,-.W
2- ( U,-.W
,@. ( 0) ,
,@. ( 0) ,
g%+ % #
g%+ % #
g%+
g%+
100000
( U%W
( U%W
10000
( U%W
( U%W
1000
$
$
$
$
100
30
25
20
15
10
5
0
#
#
#
#
$ !
$ !
0,0
$ !
$ !
0
20
0,5
!
!
!
!
%&' ( )*+
%&' ( 0 )*+
>€f
2<a% a # +
2<a% a # +
2<a% a # +
2<a% a # +
40
2<a%
2<a%
2<a%
2<a%
1,0
60
U
U
U
U
1,5
,-. n,p
%- n*+p
!
!
!
!
80
U
U
U
U
W
W
W
W
2,0
100
W
W
W
W
FP25R12KT3
U
U
U
U
2,5
U
U
U
U
120
3,0
W
W
W
W
140
W
W
W
W
160
3,5
9
1
1
2c ( U,cW
2c ( U,cW
1
1
2c ( U,cW
2c ( U,cW
=
=
=
=
30
25
20
15
10
5
0
0,0
\!
\!
\!
\!
0,5
%&' ( )*+
%&' ( 0 )*+
1,0
1
1
1
1
Vorläufige Daten
preliminary data
1,5
a # +
a # +
a # +
a # +
,c n,p
!
!
!
!
2,0
2,5
U
U
U
U
U
U
U
U
3,0
W
W
W
W
W
W
W
W
3,5