BSM75GB120DN2 Infineon Technologies, BSM75GB120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM75GB120DN2
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
150
120
110
100
150
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
150
120
110
100
90
80
70
60
50
40
30
20
10
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
BSM 75 GB 120 DN2
2
j
= 125 °C
3
V
Mar-29-1996
V
CE
5