BSM75GB120DN2 Infineon Technologies, BSM75GB120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM75GB120DN2
• Description: IGBT Modules 1200V 75A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM75GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typ. switching time
I = f (I
par.: V
Typ. switching losses
E = f (I
par.: V
Semiconductor Group
E
t
mWs
10
10
10
10
C
ns
40
30
25
20
15
10
CE
CE
C
) , inductive load , T
5
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
20
20
40
40
60
60
GE
GE
= ± 15V, R
= ± 15 V, R
80
80
j
= 125°C
j
100 120 140
100 120 140
= 125°C
G
G
= 15
= 15
tdoff
tr
tf
tdon
I
Eon
Eoff
I
C
C
A
A
180
180
7
Typ. switching time
t = f (R
par.: V
Typ. switching losses
E = f (R
par.: V
E
t
mWs
10
10
10
10
ns
30
20
15
10
CE
CE
G
5
0
4
3
2
1
G
0
0
) , inductive load , T
) , inductive load , T
= 600V, I
= 600 V, V
10
10
20
20
C
GE
= 75 A
BSM 75 GB 120 DN2
30
30
= ± 15 V, I
40
40
j
j
= 125°C
= 125°C
50
50
C
60
= 75 A
60
Mar-29-1996
R
R
tdoff
tr
tdon
tf
Eon
Eoff
G
G
80
80