IKCS12F60AA Infineon Technologies, IKCS12F60AA Datasheet - Page 13

• Manufacturer Part Number: IKCS12F60AA
• Description: IGBT Modules CiPoS Single In-Line 600V 12A
• Manufacturer: Infineon Technologies

Specifications of IKCS12F60AA

• Collector-emitter Saturation Voltage: 2.1 V
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: MSIP-20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
Preliminary Data Sheet
1000ns
1.25mJ
1.00mJ
0.75mJ
0.50mJ
0.25mJ
0.00mJ
Figure 5. Typical switching times as a
Figure 7. Typical switching energy losses
100ns
10ns
0A
0A
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure A)
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure A)
I
I
CE
CE
C
C
,
,
= 300V, V
= 300V, V
COLLECTOR CURRENT
COLLECTOR CURRENT
5A
5A
DD
GE
10A
10A
= 15V
= 0/15V
J
J
=150°C,
= 150°C,
15A
15A
E
E
on
E
t
t
off
d(on)
r
rec
t
t
f
d(off)
13/17
Figure 6. Typical switching times as a
Figure 8. Typical switching energy losses
1000ns
100ns
0.15mJ
0.10mJ
0.05mJ
0.00mJ
10ns
25°C
25°C
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure A)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure A)
T
T
GE
GE
vJ
vJ
,
,
50°C
= 0/15V, I
= 0/15V, I
50°C
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
CIPOS™ IKCS12F60AA
75°C
75°C
C
C
= 6A
= 6A
CE
CE
= 300V,
= 300V,
100°C
100°C
Rev. 1.4, Dec. 2007
125°C
125°C
E
E
E
rec
off
on
t
d(off)
t
d(on)
t
t
f
r