SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 12

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

Figure B. Definition of switching losses
Figure A. Definition of switching times
12
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
SKB06N60
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r r
r r
Rev. 2.2
t
r r
S
Q
S
+
90% I
F
t
+
F
Q
t
F
=180nH
=250pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
Oct. 07
r r m
V
T
t
R
C