CY7C1019DV33-10BVXIT Cypress Semiconductor Corp, CY7C1019DV33-10BVXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1019DV33-10BVXIT
• Description: CY7C1019DV33-10BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019DV33-10BVXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05481 Rev. *E
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Notes
C
C


4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
Parameter
Parameter
IN
OUT
JA
JC
shown in Figure (c).
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
OUTPUT
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[4]
Description
Description
[4]
Z = 50
(a)
1.5V
50 
[5]
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
A
= 25 C, f = 1 MHz, V
High-Z characteristics:
OUTPUT
30 pF*
3.3V
Test Conditions
Test Conditions
5 pF
CC
(c)
= 3.3V
R1 317 
GND
3.0V
Rise Time: 1 V/ns
351
R2
10%
90%
56.29
38.14
SOJ
ALL INPUT PULSES
Max.
(b)
8
8
CY7C1019DV33
TSOP II VFBGA
62.22
21.43
Fall Time: 1 V/ns
36
90%
9
Page 4 of 13
10%
Unit
pF
pF
C/W
C/W
Unit
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