CY7C1019DV33-10BVXIT Cypress Semiconductor Corp, CY7C1019DV33-10BVXIT Datasheet - Page 6

• Manufacturer Part Number: CY7C1019DV33-10BVXIT
• Description: CY7C1019DV33-10BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019DV33-10BVXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05481 Rev. *E
Data Retention Waveform
Data Retention Characteristics
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
Read Cycle No. 2 (OE Controlled)
Notes
V
I
t
t
13. Full device operation requires linear V
14. Device is continuously selected. OE, CE = V
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
CCDR
CDR
R
DATA OUT
CURRENT
ADDRESS
DR
Parameter
[13]
DATA OUT
ADDRESS
SUPPLY
[4]
V
OE
CE
CC
V
CE
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Description
t
LZCE
CC
[15, 16]
ramp from V
t
t
ACE
LZOE
IL
.
(Over the Operating Range)
50%
t
OHA
t
t
DOE
CDR
3.0V
DR
to V
t
AA
CC(min.)
[14, 15]
V
V
IN
CC
t
RC
> 50 s or stable at V
> V
= V
DATA RETENTION MODE
CC
DR
– 0.3V or V
= 2.0V, CE > V
t
RC
RC
V
DR
Conditions
>
2V
CC(min.)
IN
DATA VALID
< 0.3V
CC
> 50 s.
– 0.3V,
t
HZOE
DATA VALID
3.0V
t
R
Min.
t
2.0
t
HZCE
CY7C1019DV33
RC
0
t
PD
50%
Max.
3
IMPEDANCE
Page 6 of 13
HIGH
Unit
mA
ns
ns
V
ICC
ISB
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