CY7C1019DV33-10BVXIT Cypress Semiconductor Corp, CY7C1019DV33-10BVXIT Datasheet - Page 7

• Manufacturer Part Number: CY7C1019DV33-10BVXIT
• Description: CY7C1019DV33-10BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019DV33-10BVXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05481 Rev. *E
Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
Notes
17. Data I/O is high impedance if OE = V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
19. During this period the I/Os are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
DATA I/O
DATA I/O
WE
WE
CE
OE
CE
NOTE 19
(continued)
t
IH
SA
t
.
HZOE
[17, 18]
t
SA
t
AW
t
AW
t
SCE
t
t
WC
WC
[17, 18]
t
PWE
DATA
t
t
PWE
SD
DATA VALID
t
SCE
IN
t
t
SD
SCE
VALID
t
HD
t
HA
t
HA
t
HD
CY7C1019DV33
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