CY7C1041DV33-10BVJXIT Cypress Semiconductor Corp, CY7C1041DV33-10BVJXIT Datasheet - Page 10

CY7C1041DV33-10BVJXIT

CY7C1041DV33-10BVJXIT

Manufacturer Part Number
CY7C1041DV33-10BVJXIT
Description
CY7C1041DV33-10BVJXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1041DV33-10BVJXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1041DV33-10BVJXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Truth Table
Document Number: 38-05473 Rev. *I
Note
29. During this period the I/Os are in the output state and input signals should not be applied.
CE
H
L
L
L
L
L
L
L
BHE, BLE
DATA I/O
ADDRESS
OE
X
X
X
X
H
L
L
L
CE
WE
WE
H
H
H
H
X
L
L
L
BLE
X
H
H
X
L
L
L
L
BHE
t
SA
X
H
H
X
L
L
L
L
(continued)
Figure 9. Write Cycle No. 4 (WE Controlled, OE LOW)
High Z
Data out
Data out
High Z
Data in
Data in
High Z
High Z
NOTE
I/O
0
29
–I/O
7
t
AW
High Z
Data out
High Z
Data out
Data in
High Z
Data in
High Z
t
SCE
I/O
t
t
t
BW
WC
HZWE
8
–I/O
15
t
PWE
Power-down
Read all bits
Read lower bits only
Read upper bits only
Write all bits
Write lower bits only
Write upper bits only
Selected, outputs disabled
t
SD
Mode
t
HD
t
LZWE
t
HA
CY7C1041DV33
Standby (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Page 10 of 17
Power
CC
CC
CC
CC
CC
CC
CC
SB
)
)
)
)
)
)
)
)
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