CY7C1041DV33-10BVJXIT Cypress Semiconductor Corp, CY7C1041DV33-10BVJXIT Datasheet - Page 5

• Manufacturer Part Number: CY7C1041DV33-10BVJXIT
• Description: CY7C1041DV33-10BVJXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041DV33-10BVJXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Thermal Resistance
AC Test Loads and Waveforms
The AC test loads and waveform diagram follows.
Notes
Document Number: 38-05473 Rev. *I
C
C
Parameter
Parameter
7. Tested initially and after any design or process changes that may affect these parameters.
8. AC characteristics (except high Z) are tested using the load conditions shown in
IN
OUT
using the test load shown in (c).
Θ
Θ
JA
JC
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
High-Z Characteristics
10 ns device
OUTPUT
Input capacitance
I/O capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
OUTPUT
3.3V
[7]
Description
Description
5 pF
[7]
(c)
R 317Ω
Z = 50 Ω
351Ω
(a)
R2
1.5V
50 Ω
T
Still Air, soldered on a 3 × 4.5 inch,
four layer printed circuit board
A
= 25 °C, f = 1 MHz, V
[8]
Test Conditions
Test Conditions
30 pF*
GND
AC Test Loads and Waveforms
3.0V
Rise Time: 1 V/ns
CC
= 3.3 V
10%
Package
90%
FBGA
27.89
14.74
ALL INPUT PULSES
(a). High Z characteristics are tested for all speeds
Max
8
8
(b)
Package
57.91
36.73
SOJ
CY7C1041DV33
Fall Time: 1 V/ns
90%
Package
TSOP II
10%
50.66
17.17
Unit
pF
pF
Page 5 of 17
°C/W
°C/W
Unit
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