CY7C1041DV33-10BVJXIT Cypress Semiconductor Corp, CY7C1041DV33-10BVJXIT Datasheet - Page 9

• Manufacturer Part Number: CY7C1041DV33-10BVJXIT
• Description: CY7C1041DV33-10BVJXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041DV33-10BVJXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document Number: 38-05473 Rev. *I
Notes
26. Data I/O is high impedance if OE or BHE and BLE = V
27. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
28. During this period the I/Os are in the output state and input signals should not be applied.
ADDRESS
BHE, BLE
DATA I/O
BHE, BLE
DATAI/O
ADDRESS
CE
WE
OE
WE
CE
NOTE
28
Figure 8. Write Cycle No. 3 (WE Controlled, OE HIGH During Write)
(continued)
t
SA
t
t
SA
HZOE
Figure 7. Write Cycle No. 2 (BLE or BHE Controlled)
IH.
t
AW
t
AW
t
SCE
t
t
WC
WC
DATA
t
t
PWE
SD
t
t
BW
t
PWE
SCE
IN
VALID
t
SD
t
HD
t
HA
[26, 27]
t
HD
t
HA
CY7C1041DV33
Page 9 of 17
[+] Feedback