CY7C1041DV33-10BVJXIT Cypress Semiconductor Corp, CY7C1041DV33-10BVJXIT Datasheet - Page 8

• Manufacturer Part Number: CY7C1041DV33-10BVJXIT
• Description: CY7C1041DV33-10BVJXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041DV33-10BVJXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document Number: 38-05473 Rev. *I
Notes
22. WE is HIGH for read cycle.
23. Address valid prior to or coincident with CE transition LOW.
24. Data I/O is high impedance if OE or BHE and BLE = V
25. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
DATA OUT
CURRENT
ADDRESS
BHE, BLE
SUPPLY
BHE, BLE
V
DATAI/O
ADDRESS
CC
OE
CE
CE
WE
HIGH IMPEDANCE
t
t
LZCE
PU
(continued)
t
SA
t
Figure 5. Read Cycle No. 2 (OE Controlled)
ACE
Figure 6. Write Cycle No. 1 (CE Controlled)
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
IH.
t
AW
t
RC
t
WC
t
SCE
t
PWE
t
BW
DATA VALID
t
SD
[22, 23]
[24, 25]
t
HZOE
t
HD
t
t
t
HZCE
HZBE
HA
t
CY7C1041DV33
PD
50%
IMPEDANCE
HIGH
Page 8 of 17
I
I
ICC
ISB
CC
SB
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