CY7C1412KV18-250BZCT Cypress Semiconductor Corp, CY7C1412KV18-250BZCT Datasheet - Page 16

• Manufacturer Part Number: CY7C1412KV18-250BZCT
• Description: CY7C1412KV18-250BZC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1412KV18-250BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-57825 Rev. *D
V
V
V
V
V
V
I
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
13. Overshoot: V
14. All voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input and output load current
DDQ
Selection
Circuitry
+ 0.85 V (Pulse width less than t
[12, 13, 14]
Description
108
31
Boundary Scan Register
CYC
30
Identification Register
.
Instruction Register
/2), Undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
GND  V
OH
OH
OL
OL
Bypass Register
2
2
2
= 2.0 mA
= 100 A
=2.0 mA
=100 A

Test Conditions
1.5 V (Pulse width less than t
1
1
1
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
I
 V
0
0
0
0
DD
Electrical Characteristics
Selection
Circuitry
0.65V
CYC
–0.3
Min
1.4
1.6
/2).
–5
–
–
DD
V
0.35V
DD
Max
table.
0.4
0.2
–
–
5
+ 0.3
DD
Page 16 of 32
TDO
Unit
A
V
V
V
V
V
V
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