CY7C1412KV18-250BZCT Cypress Semiconductor Corp, CY7C1412KV18-250BZCT Datasheet - Page 27

• Manufacturer Part Number: CY7C1412KV18-250BZCT
• Description: CY7C1412KV18-250BZC
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1412KV18-250BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 001-57825 Rev. *D
33. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
34. Outputs are disabled (high Z) one clock cycle after a NOP.
35. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
CQ
Q
C
RPS
WPS
C
CQ
A
D
K
K
D10
A0
1
READ
t KHCH
t KH
t KH
t SA t HA
D11
A1
WRITE
2
t KHCH
t KL
t KL
t
t SA t HA
SC t
D30
A2
3
READ
t HC
Figure 5. Read/Write/Deselect Sequence
t KHKH
t CQOH
t CLZ
t CO
t SD
t CYC
D31
A3
4
WRITE
t HD
t CQOH
t CCQO
D50
A4
5
t CYC
READ
Q00
t KHKH
t DOH
t CCQO
D51
A5
WRITE
6
Q01
t CQDOH
t SD t HD
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
D60
7
NOP
Q20
[33, 34, 35]
t CQH
D61
A6
WRITE
8
Q21
t CQD
DON’T CARE
NOP
9
Q40
t
t CQHCQH
CHZ
UNDEFINED
10
Q41
Page 27 of 32
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