CY7C1412KV18-250BZCT Cypress Semiconductor Corp, CY7C1412KV18-250BZCT Datasheet - Page 3
CY7C1412KV18-250BZCT
Manufacturer Part Number
CY7C1412KV18-250BZCT
Description
CY7C1412KV18-250BZC
Manufacturer
Cypress Semiconductor Corp
Series
-r
Datasheet
1.CY7C1412KV18-250BZCT.pdf
(32 pages)
Specifications of CY7C1412KV18-250BZCT
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (2M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / Rohs Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1412KV18-250BZCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Logic Block Diagram (CY7C1412KV18)
Logic Block Diagram (CY7C1414KV18)
Document Number: 001-57825 Rev. *D
A
A
(19:0)
(18:0)
DOFF
DOFF
BWS
V
WPS
BWS
V
WPS
REF
REF
D
K
K
D
K
K
20
19
[1:0]
[17:0]
[3:0]
[35:0]
Register
Address
Register
Control
Address
Control
18
Logic
CLK
Gen.
36
Logic
CLK
Gen.
Write
Read Data Reg.
Write
Read Data Reg.
Reg
Reg
36
72
Write
Write
18
Reg
18
36
Reg
36
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
Reg.
Reg.
Reg.
Reg.
Register
Address
Register
Address
Control
Control
Logic
Logic
Reg.
Reg.
18
18
36
36
20
19
RPS
C
C
RPS
C
18
C
36
A
A
(19:0)
(18:0)
Page 3 of 32
CQ
CQ
Q
CQ
CQ
Q
[17:0]
[35:0]
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