STPS20L25CG STMicroelectronics, STPS20L25CG Datasheet

Schottky (Diodes & Rectifiers) LOW DROP POWER RECTIFIER

STPS20L25CG

Manufacturer Part Number
STPS20L25CG
Description
Schottky (Diodes & Rectifiers) LOW DROP POWER RECTIFIER
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L25CG

Product
Schottky Rectifiers
Peak Reverse Voltage
25 V
Forward Continuous Current
10 A
Max Surge Current
220 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.56 V at 20 A
Maximum Reverse Leakage Current
800 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
(max)
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
n
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
n
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward current
F(AV)
I
Surge non repetitive forward current
FSM
I
Repetitive peak reverse current
RRM
I
Non repetitive peak reverse current
RSM
P
Repetitive peak avalanche power
ARM
T
Storage temperature range
stg
Tj
Maximum operating junction temperature *
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
* :
thermal runaway condition for a diode on its own heatsink
dTj
Rth j
a
(
)
July 2003 - Ed : 4A
2 x 10 A
25 V
150 °C
0.35 V
STPS20L25CT
2
PAK, this device is
Parameter
Tc = 145°C
= 0.5
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
STPS20L25CT/CG
A1
K
A2
K
A2
A1
K
A1
2
TO-220AB
D
PAK
STPS20L25CG
Value
25
30
Per diode
10
Per device
20
220
1
3
5300
- 65 to + 150
150
10000
A2
Unit
V
A
A
A
A
A
W
C
°C
V/µs
1/5

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STPS20L25CG Summary of contents

Page 1

... V 150 °C 0.35 V STPS20L25CT 2 PAK, this device is Parameter Tc = 145° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS20L25CT/ TO-220AB D PAK STPS20L25CG Value 25 30 Per diode 10 Per device 20 220 1 3 5300 - 150 150 10000 A2 Unit °C V/µs ...

Page 2

STPS20L25CT/CG THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions I * ...

Page 3

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 t(s) =0.5 0 1E-3 1E-2 Fig. 7: Reverse leakage current versus reverse voltage ...

Page 4

STPS20L25CT/CG PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF ...

Page 5

... STPS20L25CT STPS20L25CG STPS20L25CG STPS20L25CG-TR STPS20L25CG EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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