STPS10H100CFP STMicroelectronics, STPS10H100CFP Datasheet

DIODE SCHTKY 100V 5A TO-220FPAB

STPS10H100CFP

Manufacturer Part Number
STPS10H100CFP
Description
DIODE SCHTKY 100V 5A TO-220FPAB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS10H100CFP

Voltage - Forward (vf) (max) @ If
730mV @ 5A
Current - Reverse Leakage @ Vr
3.5µA @ 100V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
497-7540-5
STPS10H100CFP

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FEATURES AND BENEFITS
DESCRIPTION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D
ABSOLUTE RATINGS (limiting values, per diode)
* :
MAIN PRODUCT CHARACTERISTICS
July 2003 - Ed: 3F
Symbol
I
HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT
LOW
TEMPERATURE
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
RRM
dPtot
FSM
RRM
ARM
Tj
dTj
stg
V
F
V
I
LEAKAGE
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
(max)
®
RRM
Tj
Rth j
2
(
PAK and I
1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
a
)
CURRENT
thermal runaway condition for a diode on its own heatsink
2
PAK.
TO-220AB
D
TO-220FPAB
2 x 5 A
175°C
0.61 V
100 V
2
PAK / I
AT
Parameter
2
PAK
HIGH
STPS10H100CT/CG/CR/CFP
Tc = 165°C
Tc = 160°C
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
STPS10H100CT
STPS10H100CG
TO-220AB
K
D
2
PAK
per diode
per device
A1
A1
A2
A1
A2
K
A2
K
STPS10H100CR
STPS10H100CFP
- 65 to + 175
TO-220FPAB
10000
Value
7200
K
100
180
175
I
10
10
2
5
1
PAK
A1
K
A1
A2
Unit
V/µs
K
°C
W
V
A
A
A
A
C
A2
1/7

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STPS10H100CFP Summary of contents

Page 1

... K AT HIGH STPS10H100CG TO-220AB STPS10H100CT Parameter TO-220AB Tc = 165° PAK / I PAK TO-220FPAB Tc = 160° sinusoidal µs square F = 1kHz tp = 1µ 25° PAK D PAK STPS10H100CR TO-220FPAB STPS10H100CFP Value 100 10 per diode 5 per device 10 180 1 7200 - 175 175 10000 Unit °C V/µs 1/7 ...

Page 2

STPS10H100CT/CG/CR/CFP THERMAL RESISTANCES Symbol R Junction to case th (j- (c) R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ...

Page 3

Fig. 3: Normalized avalanche power derating ver- sus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration ...

Page 4

STPS10H100CT/CG/CR/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) 1E+4 Tj=150°C 1E+3 Tj=125°C 1E+2 Tj=100°C 1E+1 1E+0 Tj=25°C 1E-1 VR(V) 1E Fig. 9: Forward voltage drop versus forward ...

Page 5

STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOT PRINT in millimeters 16.90 10.30 3.70 8.90 REF ...

Page 6

PACKAGE MECHANICAL DATA 2 I PAK PACKAGE MECHANICAL DATA TO-220FPAB 6/7 REF ...

Page 7

... G Cooling method: C. Recommended torque value: 0.55 m.N Maximum torque value 0.70 m.N Ordering type STPS10H100CT STPS10H100CT STPS10H100CFP STPS10H100CFP STPS10H100CG STPS10H100CG STPS10H100CG-TR STPS10H100CG STPS10H100CR STPS10H100CR Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use ...

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