STPS2030CT STMicroelectronics, STPS2030CT Datasheet - Page 3

• Manufacturer Part Number: STPS2030CT
• Description: DIODE SCHOTTKY 30V 10A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS2030CT

• Voltage - Forward (vf) (max) @ If: 500mV @ 10A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-2750-5

Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
175
150
125
100
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.E+03
1.E+02
1.E+01
1.E+00
Fig. 9: Forward voltage drop versus forward
current.
100
1.E-01
1.E-02
1.E-03
75
50
25
10
1.E-03
0
1
0.0
I (A)
I
M
FM
I
0
M
I (mA)
(A)
R
(typical values)
T =125°C
j
=0.5
t
0.2
5
(maximum values)
T =125°C
j
1.E-02
0.4
10
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
j
j
j
j
j
j
V
t(s)
FM
V (V)
0.6
R
15
(V)
(maximum values)
T =25°C
j
1.E-01
0.8
20
1.0
25
T =125°C
T =25°C
T =75°C
a
a
a
1.E+00
1.2
30
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
10.0
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm).
80
70
60
50
40
30
20
10
1.0
0.1
0
1.E-03
0
R
Z
1
C(nF)
Single pulse
th(j-c)
th(j-a)
= 0.5
= 0.2
= 0.1
(°C/W)
/R
5
th(j-c)
10
1.E-02
15
S(Cu)(cm²)
t (s)
V (V)
p
STPS2030CT/CG/CR
R
20
10
25
1.E-01
30
=tp/T
V
OSC
F=1MHz
T =25°C
T
=30mV
j
35
tp
RMS
1.E+00
3/6
100
40