STPS30L40CW STMicroelectronics, STPS30L40CW Datasheet
STPS30L40CW
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STPS30L40CW
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STPS30L40CW Summary of contents
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... July 2003 - Ed: 4A STPS30L40CG/CT/ 150 ° PAK TO-220AB STPS30L40CT Parameter Tc = 135° Sinusoidal µs square F=1kHz tp = 100 µs square tp = 1µ 25° PAK STPS30L40CG TO-247 STPS30L40CW Value Per diode 30 Per device 220 1 3 6000 - 150 150 10000 Unit °C °C V/µs 1/6 ...
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STPS30L40CG/CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse ...
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Fig. 3: Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum ...
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STPS30L40CG/CT/CW Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). IFM(A) 200 Typical values 100 Tj=150°C 10 Tj=125°C Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 PACKAGE MECHANICAL DATA TO-220AB H2 Dia ...
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PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm COOLING METHOD : BY CONDUCTION n (METHOD C) FOOT PRINT (in millimeters PAK 16.90 10.30 8.90 REF. ...
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... STPS30L40CG STPS30L40CG-TR STPS30L40CG STPS30L40CW STPS30L40CW EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...