STPS40L45CW STMicroelectronics, STPS40L45CW Datasheet
STPS40L45CW
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STPS40L45CW Summary of contents
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... July 2003 - Ed: 4A STPS40L45CG/CT/ 150 °C 0. PAK TO-220AB STPS40L45CT Parameter Tc = 130° Sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25° PAK STPS40L45CG TO-247 STPS40L45CW Value Per diode Per device 40 230 2 3 8100 - 150 150 10000 A2 K Unit °C C V/µs 1/6 ...
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STPS40L45CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage ...
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Fig. 3: Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum ...
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STPS40L45CT/CW Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 1000 100 Typical values Tj=150°C Tj=125°C 10 Tj=75°C Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 PACKAGE MECHANICAL DATA TO-220AB H2 Dia ...
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PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm COOLING METHOD : BY CONDUCTION (METHOD C) FOOT PRINT (in millimeters PAK 16.90 10.30 8.90 A REF. ...
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... Marking STPS40L45CG STPS40L45CG STPS40L45CT STPS40L45CT STPS40L45CW STPS40L45CW EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...