STPS60L40CW STMicroelectronics, STPS60L40CW Datasheet
STPS60L40CW
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STPS60L40CW
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STPS60L40CW Summary of contents
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... Rth July 2003 - Ed 150°C 0.50 V Parameter Tc = 135° Sinusoidal µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS60L40CW TO-247 Value Unit Per diode 60 Per device 600 2 4 12300 - 150 ° ...
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... STPS60L40CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the maximum conduction losses use the following equation : ...
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... Tc=75°C = 0.1 0.2 Tc=125°C Single pulse 0.0 1E-1 1E+0 1E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 1.0 1.2 1.4 STPS60L40CW tp(s) =tp/T 1E-3 1E-2 1E-1 VR( 1E+0 F=1MHz Tj=25°C 50 3/4 ...
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... Ordering type Marking STPS60L40CW STPS60L40CW EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...