BT258-600R NXP Semiconductors, BT258-600R Datasheet

SCRs RAIL SCR

BT258-600R

Manufacturer Part Number
BT258-600R
Description
SCRs RAIL SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT258-500R127.pdf (6 pages)

Specifications of BT258-600R

Breakover Current Ibo Max
82 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
6 mA
Mounting Style
SMD/SMT
Package / Case
SOT-78
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT258-600R,127

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Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 2002
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
RGM
GM
G(AV)
tab
T
1
2
3
/dt
, V
RRM
cathode
anode
gate
anode
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 50 mA/ s
= 10 A; I
,
G
tab
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
= 50 mA;
1
1 2 3
mb
j
= 25 ˚C prior to
111 ˚C
BT258-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -600R -800R
500
a
MAX. MAX. MAX. UNIT
500R
500
75
5
8
1
MAX.
Product specification
600
125
150
0.5
75
82
28
50
600R
5
8
2
5
5
600
BT258 series
75
5
8
1
2
g
800
800R
800
75
5
8
Rev 2.000
UNIT
k
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
2
V
A
A
A
s

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BT258-600R Summary of contents

Page 1

... CONDITIONS half sine wave; T 111 ˚C mb all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT258 series MAX. MAX. MAX. UNIT BT258- 500R 600R 800R 500 600 800 SYMBOL a g MIN. MAX. UNIT ...

Page 2

... DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258 series MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. MAX. UNIT ...

Page 3

... I p 10ms. p 1.6 111 C 1.4 1.2 0.8 0.6 0.4 100 150 , T(RMS Product specification BT258 series ITSM / initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT258 series 125 typ max 0.04 0 0.1ms 1ms 10ms 0. j-mb pulse width RGK = 100 ohms 50 100 ...

Page 5

... Epoxy meets UL94 V0 at 1/8". October 2002 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT258 series 4,5 max 1,3 5,9 min 0,6 2,4 Rev 2.000 15,8 max ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT258 series Rev 2.000 ...

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