Z0107DN 5AA4 STMicroelectronics, Z0107DN 5AA4 Datasheet - Page 4

• Manufacturer Part Number: Z0107DN 5AA4
• Description: Triacs 1.0 Amp 400 Volt
• Manufacturer: STMicroelectronics

Specifications of Z0107DN 5AA4

• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.8 V @ 1.4A
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/11
Figure 3.
Figure 5.
Figure 7.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.5
2.0
1.5
1.0
0.5
0.0
100.0
10.0
-40
1.0
0
I
0.1
T(RMS)
I
GT H L
0.01
I
, I , I [T ] /
TSM
-20
(A)
dI/dt limitation:
R
(A), I t (A s)
width t <10 ms and corresponding value of I t
th(j-a)
I
H
20A/µs
On-state rms current versus
ambient temperature (full cycle)
Relative variation of holding
current and latching current versus
junction temperature (typ. values)
Non-repetitive surge peak
on-state current and corresponding
value of I
25
& I
(TO-92)
j
L
= 150°C/W
0
2
p
I
GT H L
I
GT
2
, I , I [T =25°C]
20
0.10
50
T
2
amb
40
t sinusoidal pulse width
T (°C)
t (ms)
j
j
p
(°C)
R
60
th(j-a)
(SOT-223)
75
= 60°C/W
80
1.00
100
100
2
I
TSM
T initial = 25°C
j
I t
120
2
Doc ID 7474 Rev 9
10.00
140
125
Figure 4.
Figure 6.
Figure 8.
10.0
1.0
0.1
1.00
0.10
0.01
9
8
7
6
5
4
3
2
1
0
1
0.0
I
1E-3
TSM
I
TM
K=[Z
T
(A)
Repetitive
amb
(A)
0.5
th(j-a)
= 25°C
T = max.
j
1E-2
T
Relative variation of thermal
impedance versus pulse duration
Surge peak on-state current versus
number of cycles
On-state characteristics
(maximum values)
j
1.0
/R
th(j-a) ]
T initial = 25°C
Non repetitive
1.5
j
10
1E-1
Number of cycles
T = 25°C
Z01xxA
j
2.0
Z01xxN
V
t (s)
p
TM
2.5
1E+0
(V)
3.0
100
1E+1
3.5
4.0
R =400 m
V =0.95 V
t=20ms
1E+2
One cycle
d
T =max.
t0
j
4.5
Ω
5E+2
1000
5.0
Z01