BTH151S-650R /T3 NXP Semiconductors, BTH151S-650R /T3 Datasheet

SCRs TAPE13 TRIAC

BTH151S-650R /T3

Manufacturer Part Number
BTH151S-650R /T3
Description
SCRs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTH151S-650R /T3

Breakover Current Ibo Max
121 A
Rated Repetitive Off-state Voltage Vdrm
650 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Package / Case
SOT-428
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTH151S-650R,118
Philips Semiconductors
Thyristor
High Repetitive Surge
GENERAL DESCRIPTION
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use
bidirectional blocking voltage capability and
high thermal cycling performance. This
thyristor has a high repetitive surge
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
PINNING - SOT428
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
March 2001
SYMBOL PARAMETER
V
V
I
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
TRM
2
GM
t
stg
j
DRM
RRM
GM
RGM
GM
G(AV)
PIN
tab
T
/dt
1
2
3
,
in
DESCRIPTION
cathode
anode
gate
anode
applications
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Repetitive peak on-state
current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
requiring
PIN CONFIGURATION
high
CONDITIONS
half sine wave;
T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10ms, = 3s, T
of surges = 100k
t = 10 ms
I
dI
over any 20 ms period
TM
mb
G
/dt = 50 mA/ s
= 20 A; I
103 ˚C
QUICK REFERENCE DATA
V
I
I
I
I
1
T(AV)
T(RMS)
TSM
TRM
SYMBOL
DRM
tab
2
, V
G
3
= 50 mA;
RRM
1
j
= 25 ˚C prior to
mb
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
PARAMETER
45˚C, no.
SYMBOL
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
MAX.
BTH151S-650R
Product specification
1
110
121
150
125
650
7.5
0.5
12
60
61
50
2
5
5
5
g
MAX.
650
110
7.5
12
60
Rev 1.001
k
UNIT
UNIT
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
A
V
V
V
A
A
A
A
2
s

Related parts for BTH151S-650R /T3

BTH151S-650R /T3 Summary of contents

Page 1

... CONDITIONS half sine wave; T 103 ˚C mb all conduction angles half sine wave ˚C prior to j surge 8 10ms, = 3s, T 45˚C, no surges = 100k over any 20 ms period 1 Product specification BTH151S-650R MAX. UNIT 650 7.5 12 110 60 SYMBOL MIN. MAX. UNIT 1 - 650 - 7 110 - 121 - 60 ...

Page 2

... DRM(max / 67 125 ˚C; D DRM(max / / 100 D GK 10ms 3 s (Minimum) =60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive P cycle T=3 seconds minimum. 2 Product specification BTH151S-650R MIN. TYP. MAX 1 MIN. TYP. MAX 1.4 1.75 - 0.6 1.5 0.25 0 125 ˚C - 0.1 0.5 MIN ...

Page 3

... Fig.7. Normalised gate trigger voltage T(RMS Product specification BTH151S-650R I TSM I T time T Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.12. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.13. Typical, critical rate of rise of off-state voltage Product specification BTH151S-650R typ max 0 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 Ohms gate open circuit 50 100 /dt versus junction temperature T ...

Page 5

... Fig.14. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.15. SOT428 : minimum pad sizes for surface mounting. 5 Product specification BTH151S-650R seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.001 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2001 6 Product specification BTH151S-650R Rev 1.001 ...

Related keywords