BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet
BLF6G27L-50BN,118
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BLF6G27L-50BN,118 Summary of contents
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... BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 — 7 April 2011 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF per carrier; ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G27L-50BN (SOT1112A BLF6G27LS-50BN (SOT1112B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G27L-50BN BLF6G27LS-50BN 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol GS(sense stg T j BLF6G27L-50BN_6G27LS-50BN Product data sheet Pinning ...
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... MHz; RF performance Parameter average output power power gain drain efficiency adjacent channel power ratio quiescent drain current All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor Conditions = 80 ° 12.5 W (CW) case L Conditions Min ...
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... Symbol PAR O 7.1 Ruggedness in Class-AB operation The BLF6G27L-50BN and BLF6G27LS-50BN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). ...
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... ACPR (dBc (W) L Fig 4. 001aan485 P (1) (2) ( (W) L Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor 15 1980 30 (1) (2) ( 430 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Single carrier IS-95 ACPR at 1980 kHz as a function of load power ...
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... MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF6G27L-50BN_6G27LS-50BN Product data sheet 001aan487 (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor 50 D (%) 430 mA. ...
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... BLF6G27L-50BN_6G27LS-50BN Product data sheet = 2600 MHz 2700 MHz 001aan489 (W) L Fig 10. 2-carrier W-CDMA drain efficiency as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor = 25 °C; unless otherwise specified. case 50 D (%) ...
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... Fig 11. 2-carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values BLF6G27L-50BN_6G27LS-50BN Product data sheet 001aan491 ACPR (dBc (W) L Fig 12. 2-carrier W-CDMA ACPR at 10 MHz as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor 10 10M 20 (1) ( ...
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... Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF6G27L-50BN_6G27LS-50BN Product data sheet 001aan493 (W) L Fig 14. Single carrier W-CDMA peak output power as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor 100 L(M) ( 430 mA ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor ( 3.00 3 ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor ( 3.00 1.70 9.91 9 ...
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... Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... NXP Semiconductors 11. Revision history Table 10. Revision history Document ID BLF6G27L-50BN_6G27LS-50BN v.2 Modifications: BLF6G27L-50BN_6G27LS-50BN v.1 BLF6G27L-50BN_6G27LS-50BN Product data sheet Release date Data sheet status 20110407 Product data sheet • Section 1.1 on page has been changed • Table 1 on page 1: several changes have been made. ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 April 2011 BLF6G27L(S)-50BN Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G27L-50BN_6G27LS-50BN All rights reserved. Date of release: 7 April 2011 ...