BLF6G27L-50BN,118 NXP Semiconductors, BLF6G27L-50BN,118 Datasheet - Page 6

• Manufacturer Part Number: BLF6G27L-50BN,118
• Description: RF MOSFET Power Single 65V 0.25Ohms
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27L-50BN,118

• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1112A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
13
12
0
V
Pulsed CW power gain as a function of load
power; typical values
DS
= 28 V; I
10
Dq
= 430 mA.
20
(1)
(2)
(3)
30
40
All information provided in this document is subject to legal disclaimers.
001aan487
P
L
(W)
50
Rev. 2 — 7 April 2011
Fig 8.
(%)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
10
0
0
V
Pulsed CW drain efficiency as a function of
load power; typical values
DS
= 28 V; I
BLF6G27L(S)-50BN
10
Dq
= 430 mA.
20
Power LDMOS transistor
30
© NXP B.V. 2011. All rights reserved.
40
001aan488
(1)
(2)
(3)
P
L
(W)
50
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