BF904R T/R NXP Semiconductors, BF904R T/R Datasheet - Page 8

• Manufacturer Part Number: BF904R T/R
• Description: RF MOSFET Small Signal TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF904R T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-61B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF904R,215

NXP Semiconductors
handbook, halfpage
N-channel dual gate MOS-FETs
V
I
V
I
Fig.16 Input admittance as a function of frequency;
D
D
(mS)
Fig.18 Forward transfer admittance and phase as
(mS)
DS
DS
y fs
y is
= 15 mA; T
= 15 mA; T
10
10
10
10
10
= 5 V; V
= 5 V; V
1
1
2
2
1
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
y fs
b is
g is
fs
f (MHz)
f (MHz)
MLD279
MLD277
10
10
Rev. 06 - 13 November 2007
3
3
10
10
1
(deg)
2
fs
handbook, halfpage
V
I
V
I
D
D
( S)
DS
Fig.17 Reverse transfer admittance and phase as
DS
(mS)
y rs
= 15 mA; T
= 15 mA; T
y os
10
10
10
10
10
= 5 V; V
= 5 V; V
10
1
1
3
2
Fig.19 Output admittance as a function of
1
2
10
10
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
frequency; typical values.
= 25 C.
= 25 C.
10
10
2
2
y rs
BF904; BF904R
b os
g os
rs
f (MHz)
f (MHz)
Product specification
MLD278
MLD280
10
8 of 14
10
3
3
10
10
10
1
(deg)
3
rs
2