J176 AMO NXP Semiconductors, J176 AMO Datasheet

RF JFET AMMORA FET-RFSS

J176 AMO

Manufacturer Part Number
J176 AMO
Description
RF JFET AMMORA FET-RFSS
Manufacturer
NXP Semiconductors
Datasheets

Specifications of J176 AMO

Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SPT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
35mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
J176,126
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177
P-channel silicon field-effect
transistors
Product specification
April 1995

Related parts for J176 AMO

J176 AMO Summary of contents

Page 1

DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification DISCRETE SEMICONDUCTORS April 1995 ...

Page 2

... NXP Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING 1 = drain 2 = source ...

Page 3

... NXP Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (d.c.) Total power dissipation = 25 C ( amb Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS = 25  ...

Page 4

... NXP Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS = 25 C unless otherwise specified T j Input capacitance MHz Feedback capacitance MHz Switching times (see Fig.2  3) Delay time Rise time Turn-on time Storage temperature Fall time Turn-off time Test conditions: −V DD handbook, halfpage 50 Ω ...

Page 5

... NXP Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 April 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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